Global Power Technology(Beijing) Co., Ltd.

Established in 2005 and headquartered in Beijing, China, Global Power Technology operates a state-of-the-art SiC wafer fabrication facility in Beijing, contributing to its position as a leading manufacturer of SiC power devices. The company's product range includes 650V, 1200V, 1700V, and 3300V SiC Schottky diodes, and it prides itself on a customer-oriented approach, providing power device module designs and solutions globally.

The company's Series E investment on 12 August 2023 saw participation from Hongtai Fund and Haier Capital, reflecting investor confidence in Global Power Technology's trajectory amidst the surging demand for SiC power devices. The company's unwavering commitment to R&D and mass production of SiC power devices, not only in China but also globally, underscores its vision for industry leadership.