GT Advanced Technologies logo — INNOVATION AND GROWTH BEGIN HERE

GT Advanced Technologies

INNOVATION AND GROWTH BEGIN HERE

Founded 1994 United States Hudson, United States 559 employees Post-IPO Equity Total: $83.65M Manufacturing, Renewable Energy +1

General Information

Company Name GT Advanced Technologies
Founded Year 1994
Location United States Hudson, United States
Founders / Decision Makers
Team member
Employees 559
Industries Manufacturing, Renewable Energy, Semiconductor
Funding Stage Post-IPO Equity
Social

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About GT Advanced Technologies

GT Advanced Technologies is a leading producer of high-quality crystal materials for a wide range of applications including advanced semiconductors, high-energy lasers, and aerospace/defense windows. The company, founded in 1994 and headquartered in the United States, specializes in the production of silicon carbide (SiC) in Hudson, New Hampshire, a material that surpasses basic silicon in its capabilities and is in high demand for advanced technologies such as electric vehicles. GTAT is a pioneer in SiC production, catering to partners within the semiconductor supply chain. Additionally, the company is noted for its production of sapphire, which is utilized in applications such as high-power lasers and aircraft windows to enhance optical performance. GTAT's expertise lies in creating exceptionally pure and large-sized sapphire, setting it apart in the industry. The company's recent significant investment of $50.18M in Post-IPO Equity on 29 May 2013 signifies investor confidence and a strong potential for growth. GTAT's commitment to expanding its supply of these advanced materials while driving down costs positions it as a promising player in the semiconductor industry and related high-tech fields.

Business keywords: semiconductor materials, silicon carbide, sapphire, crystal materials, crystal growth, advanced materials, EV industry, high-power lasers, aerospace/defense, crystal-growth equipment, high-quality materials, innovation, growth, electric vehicles

Funding Rounds & Investors (2)

View All
Funding Stage Amount Investors Lead Investors Date
Post IPO Equity $50.18M -
29 May 2013
Post IPO Equity $33.47M -
12 Aug 2010

GT Advanced Technologies Alternatives & Competitors

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GT Advanced Technologies vs

Providing customers with advanced material solutions for semiconductors.

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GT Advanced Technologies vs

Full power of SiC

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GT Advanced Technologies vs

Innovative developer and manufacturer of power semiconductors, SiC and IGBT modules for power electr...

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FAQ About GT Advanced Technologies

INNOVATION AND GROWTH BEGIN HERE
GT Advanced Technologies was founded in 1994.
GT Advanced Technologies is headquartered in Hudson, United States.
GT Advanced Technologies operates in Manufacturing, Renewable Energy and Semiconductor. Its work centres on semiconductor materials, silicon carbide, sapphire and crystal materials.
GT Advanced Technologies has approximately 559 employees.
GT Advanced Technologies has completed 2 funding rounds, raising a total of $83.65M. The latest funding stage is Post-IPO Equity.
Top alternatives and competitors to GT Advanced Technologies include Hunan DeZhi New Material Co., Ltd., Ascatron AB, Leapers Semiconductor, LPE S.p.A. , Gaianixx Inc.. These companies operate in related industries and serve comparable markets. You can compare them side by side on Bounce Watch.
GT Advanced Technologies and Hunan DeZhi New Material Co., Ltd. are both companies in similar industries. Compare their funding, team size, growth signals, and market position on Bounce Watch to see which one fits your needs.

Source: BounceWatch company record for GT Advanced Technologies, https://bouncewatch.com/company/gt-advanced-technologies, updated 31 December 2024. When citing, please name BounceWatch and link this page.

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