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VisIC Technologies Ltd. logo — GaN Power Semiconductor device company. We like to drive t...

VisIC Technologies Ltd.

GaN Power Semiconductor device company. We like to drive technology

Founded 2010 Israel Israel 40 employees Series F Total: $56.60M Energy, Semiconductor +1

General Information

Company Name VisIC Technologies Ltd.
Founded Year 2010
Location Israel Israel +1
Employees 40
Industries Energy, Semiconductor, Automotive
Funding Stage Series F
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About VisIC Technologies Ltd.

VisIC Technologies Ltd. is an Israeli-based company that was founded in 2010. The company specializes in the development of high-voltage (650V and above), high-volume GaN devices for the power conversion market. VisIC's technical team, with over 20 years of cumulative experience in GaN-based RF devices, has created a native normally-OFF GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT), catering to safety concerns in power conversion systems. Their expertise lies in Device & Process Designs, GaN Power Electronics, and Energy Conversions. The company's recent achievement includes securing a substantial $35.00M Series F investment on 25 August 2021, from prominent investors such as GoldenSand Capital and Fast Semi Corp.. This investment is indicative of the confidence and interest of the market in VisIC's innovative GaN power semiconductor technology. With a strong focus on driving technology forward and ensuring safety in power systems, VisIC Technologies Ltd. continues to make significant strides in the semiconductor industry. Their commitment to leveraging GaN-based devices demonstrates potential for growth and advancement in the power conversion market.

Taxonomy: GaN semiconductor, Power electronics, High-voltage devices, Power conversion market, GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT), Normally-OFF mode, Device design, Process design, Energy conversion, PCMA member, CPES member, AIAG member

Funding Rounds & Investors (6)

View All
Funding Stage Amount Investors Lead Investors Date
Series F •••••• 2
Investor
•••• •••• 		25 Aug 2021
Grant •••••• 1 •••• •••• 21 Dec 2020
Series E •••••• 1 •••• •••• 19 Oct 2020
Series D •••••• - 06 Jun 2018
Series C •••••• 1 •••• •••• 15 Jan 2017

View All 6 Funding Rounds

VisIC Technologies Ltd. Alternatives & Competitors

VisIC Technologies Ltd. vs
Transphorm Inc.
Transphorm Inc. United States

Highest performance, highest reliability GaN

Post Ipo Equity
92 employees
Industrial, Manufacturing
Compare VisIC Technologies Ltd. vs Transphorm Inc.
VisIC Technologies Ltd. vs
Cambridge GaN Devices Ltd
Cambridge GaN Devices Ltd United Kingdom

Delivering easy-to-use and efficient GaN solutions to make more sustainable power electronics possib...

Series C
65 employees
Manufacturing, Semiconductor
Compare VisIC Technologies Ltd. vs Cambridge GaN Devices Ltd
VisIC Technologies Ltd. vs
Ganext
Ganext

Pioneering New Horizons in Gallium Nitride Power Technology

Series A
Manufacturing, Semiconductor
Compare VisIC Technologies Ltd. vs Ganext
Also compare with: VisIC Technologies Ltd. vs SweGaN AB SweGaN AB

FAQ About VisIC Technologies Ltd.

GaN Power Semiconductor device company. We like to drive technology
VisIC Technologies Ltd. was founded in 2010.
VisIC Technologies Ltd. is headquartered in Israel.
VisIC Technologies Ltd. operates in the following industries: Energy, Semiconductor, Automotive.
VisIC Technologies Ltd. has approximately 40 employees.
VisIC Technologies Ltd. has completed 6 funding rounds, raising a total of $56.60M. The latest funding stage is Series F.
Top alternatives and competitors to VisIC Technologies Ltd. include Transphorm Inc., Cambridge GaN Devices Ltd, Ganext, SweGaN AB, Shindengen America, Inc. These companies operate in related industries and serve comparable markets. You can compare them side by side on Bounce Watch.
VisIC Technologies Ltd. and Transphorm Inc. are both companies in similar industries. Compare their funding, team size, growth signals, and market position on Bounce Watch to see which one fits your needs.

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